PD57018TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-G2

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

Max Operating Temperature :

165°C

Terminal Form :

Gull wing

Min Operating Temperature :

-65°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

25 Weeks

Mount :

Surface Mount

Transistor Type :

LDMOS

Number of Pins :

3

Drain to Source Breakdown Voltage :

65V

Peak Reflow Temperature (Cel) :

250

Case Connection :

SOURCE

Drain to Source Resistance :

760mOhm

Number of Elements :

1

Number of Terminations :

2

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Voltage - Test :

28V

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

not_compliant

Frequency :

945MHz

Max Output Power :

18W

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Element Configuration :

Single

Max Power Dissipation :

31.7W

Current Rating :

2.5A

Drain to Source Voltage (Vdss) :

65V

Packaging :

Tape and Reel (TR)

Current - Test :

100mA

Pin Count :

10

Base Part Number :

PD57018

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Power Dissipation :

31.7W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Continuous Drain Current (ID) :

2.5A

Gain :

16.5dB

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

High Reliability