PD57018TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain to Source Resistance :

760mOhm

Qualification Status :

Not Qualified

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Number of Terminations :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Frequency :

945MHz

Base Part Number :

PD57018

Max Power Dissipation :

31.7W

Number of Elements :

1

Pin Count :

10

Max Output Power :

18W

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2.5A

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

LDMOS

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

65V

Mount :

Surface Mount

Power Dissipation :

31.7W

Factory Lead Time :

25 Weeks

RoHS Status :

ROHS3 Compliant

Case Connection :

SOURCE

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Voltage - Test :

28V

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Min Operating Temperature :

-65°C

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

Additional Feature :

High Reliability

Current - Test :

100mA

Element Configuration :

Single

Gain :

16.5dB

Number of Pins :

3

Max Operating Temperature :

165°C

Drain to Source Voltage (Vdss) :

65V

Terminal Position :

Dual

Current Rating :

2.5A

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

250

JESD-30 Code :

R-PDSO-G2

Transistor Application :

AMPLIFIER