PD57030-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Base Part Number :

PD57030

Element Configuration :

Single

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

65V

Pin Count :

2

Length :

7.5mm

Number of Elements :

1

JESD-30 Code :

R-PDSO-G2

Packaging :

Tube

Current - Test :

50mA

Max Output Power :

30W

Additional Feature :

High Reliability

Drain Current-Max (Abs) (ID) :

4A

Peak Reflow Temperature (Cel) :

250

Transistor Type :

LDMOS

Case Connection :

SOURCE

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

AMPLIFIER

Max Operating Temperature :

165°C

Min Operating Temperature :

-65°C

Terminal Form :

Gull wing

Mount :

Surface Mount

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Frequency :

945MHz

Package / Case :

PowerSO-10 Exposed Bottom Pad

Lead Free :

Lead Free

Voltage - Test :

28V

Number of Terminations :

2

Factory Lead Time :

25 Weeks

Voltage - Rated DC :

65V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Dissipation :

52.8W

Continuous Drain Current (ID) :

4A

Power Gain :

14dB

Current Rating :

4A

Min Breakdown Voltage :

65V

Operating Mode :

ENHANCEMENT MODE

Width :

9.4mm

Terminal Finish :

MATTE TIN

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

ECCN Code :

EAR99

Height :

3.5mm

Max Power Dissipation :

52.8W

Terminal Position :

Dual

Polarity/Channel Type :

N-Channel