PD57018-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Length :

7.5mm

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

250

Current - Test :

100mA

Height :

3.5mm

JESD-30 Code :

R-PDSO-G2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Continuous Drain Current (ID) :

2.5A

Max Output Power :

18W

Number of Terminations :

2

Mount :

Surface Mount

Voltage - Test :

28V

Max Operating Temperature :

165°C

Current Rating :

2.5A

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Number of Elements :

1

Terminal Position :

Dual

Max Power Dissipation :

31.7W

Transistor Application :

AMPLIFIER

Drain to Source Resistance :

760mOhm

Drain to Source Voltage (Vdss) :

65V

Power Dissipation :

31.7W

Frequency :

945MHz

Voltage - Rated DC :

65V

Width :

9.4mm

Factory Lead Time :

25 Weeks

Pin Count :

10

Package / Case :

PowerSO-10 Exposed Bottom Pad

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

LDMOS

Terminal Form :

Gull wing

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

65V

Polarity/Channel Type :

N-Channel

Base Part Number :

PD57018

Lead Free :

Lead Free

Case Connection :

SOURCE

Time@Peak Reflow Temperature-Max (s) :

30

Min Operating Temperature :

-65°C

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Packaging :

Tube

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

High Reliability

Min Breakdown Voltage :

65V

Power Gain :

16.5dB

Number of Pins :

3