PD57018-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Package / Case :

PowerSO-10 Exposed Bottom Pad

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Gain :

16.5dB

Peak Reflow Temperature (Cel) :

250

Current - Test :

100mA

Max Output Power :

18W

Min Operating Temperature :

-65°C

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Max Operating Temperature :

165°C

Additional Feature :

High Reliability

Operating Mode :

ENHANCEMENT MODE

Height :

3.5mm

Element Configuration :

Single

Power Dissipation :

31.7W

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Factory Lead Time :

25 Weeks

JESD-30 Code :

R-PDSO-G2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current Rating :

2.5A

Length :

7.5mm

Pin Count :

10

Frequency :

945MHz

Drain to Source Resistance :

760mOhm

Continuous Drain Current (ID) :

2.5A

Number of Pins :

3

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Transistor Type :

LDMOS

Drain to Source Voltage (Vdss) :

65V

Terminal Position :

Dual

Width :

9.4mm

Max Power Dissipation :

31.7W

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Terminal Form :

Gull wing

Packaging :

Tube

Case Connection :

SOURCE

Min Breakdown Voltage :

65V

Contact Plating :

Tin

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

65V

Base Part Number :

PD57018

Voltage - Rated DC :

65V

Voltage - Test :

28V

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Lead Free :

Lead Free