PD57006-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Number of Terminations :

2

Min Breakdown Voltage :

65V

Width :

9.4mm

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

1A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Finish :

Matte Tin (Sn) - annealed

Max Power Dissipation :

20W

Polarity/Channel Type :

N-Channel

Frequency :

945MHz

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Max Output Power :

6W

REACH SVHC :

No SVHC

Pin Count :

10

Max Operating Temperature :

165°C

Power Gain :

15dB

JESD-30 Code :

R-PDSO-G2

Packaging :

Tube

Current Rating :

1A

Voltage - Test :

28V

Number of Elements :

1

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

3.5mm

Current - Test :

70mA

Transistor Type :

LDMOS

ECCN Code :

EAR99

Number of Pins :

3

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Element Configuration :

Single

Power Dissipation :

20W

Radiation Hardening :

No

Weight :

4.535924g

Case Connection :

SOURCE

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

65V

Length :

7.5mm

Base Part Number :

PD57006

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

250

Drain to Source Breakdown Voltage :

65V

Terminal Position :

Dual

Input Capacitance :

27pF

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

1A

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Min Operating Temperature :

-65°C