PD57006-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Radiation Hardening :

No

Terminal Position :

Dual

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

1A

Number of Pins :

3

ECCN Code :

EAR99

Lead Free :

Lead Free

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Max Power Dissipation :

20W

Mount :

Surface Mount

Element Configuration :

Single

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

1A

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Min Operating Temperature :

-65°C

Current Rating :

1A

Transistor Application :

AMPLIFIER

Weight :

4.535924g

Width :

9.4mm

Min Breakdown Voltage :

65V

JESD-609 Code :

e3

Length :

7.5mm

Input Capacitance :

27pF

Max Operating Temperature :

165°C

Voltage - Test :

28V

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Max Output Power :

6W

Packaging :

Tube

Frequency :

945MHz

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Gain :

15dB

JESD-30 Code :

R-PDSO-G2

Case Connection :

SOURCE

Peak Reflow Temperature (Cel) :

250

Height :

3.5mm

Base Part Number :

PD57006

Pin Count :

10

Power Dissipation :

20W

Drain to Source Breakdown Voltage :

65V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

65V

Terminal Finish :

Matte Tin (Sn) - annealed

Transistor Type :

LDMOS

Polarity/Channel Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Current - Test :

70mA