PD57006-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Operating Temperature :

165°C

Min Breakdown Voltage :

65V

Voltage - Test :

28V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Power Gain :

15dB

Lifecycle Status :

NRND (Last Updated: 8 months ago)

JESD-609 Code :

e3

Number of Elements :

1

Weight :

4.535924g

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Current Rating :

1A

RoHS Status :

ROHS3 Compliant

Current - Test :

70mA

Pin Count :

10

Case Connection :

SOURCE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

65V

Terminal Form :

Gull wing

Number of Terminations :

2

Input Capacitance :

27pF

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

65V

Polarity/Channel Type :

N-Channel

Power Dissipation :

20W

Element Configuration :

Single

Frequency :

945MHz

Terminal Finish :

Matte Tin (Sn) - annealed

Drain Current-Max (Abs) (ID) :

1A

Transistor Type :

LDMOS

Radiation Hardening :

No

Height :

3.5mm

Min Operating Temperature :

-65°C

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

3

Length :

7.5mm

Lead Free :

Lead Free

Base Part Number :

PD57006

Continuous Drain Current (ID) :

1A

Terminal Position :

Dual

Width :

9.4mm

Transistor Application :

AMPLIFIER

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

20W

Max Output Power :

6W

JESD-30 Code :

R-PDSO-G2

Peak Reflow Temperature (Cel) :

250

Packaging :

Tube