PD57018S

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Gain :

16.5dB

ECCN Code :

EAR99

Lead Free :

Lead Free

Number of Elements :

1

Element Configuration :

Single

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Current Rating :

2.5A

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Factory Lead Time :

25 Weeks

Drain to Source Resistance :

760mOhm

Max Power Dissipation :

31.7W

Min Operating Temperature :

-65°C

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Type :

LDMOS

Terminal Finish :

MATTE TIN

Packaging :

Tube

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

65V

Max Operating Temperature :

165°C

Polarity/Channel Type :

N-Channel

Power Dissipation :

31.7W

Terminal Form :

Flat

Package / Case :

PowerSO-10 Exposed Bottom Pad

Terminal Position :

Dual

Number of Terminations :

2

Case Connection :

SOURCE

Voltage - Rated DC :

65V

JESD-30 Code :

R-PDSO-F2

Continuous Drain Current (ID) :

2.5A

Pin Count :

10

Base Part Number :

PD57018

Voltage - Test :

28V

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

250

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Current - Test :

100mA

Transistor Application :

AMPLIFIER

Max Output Power :

18W

Frequency :

945MHz