PD57018S

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Type :

LDMOS

Polarity/Channel Type :

N-Channel

Radiation Hardening :

No

Case Connection :

SOURCE

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Factory Lead Time :

25 Weeks

Continuous Drain Current (ID) :

2.5A

Voltage - Rated DC :

65V

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

31.7W

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

65V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

3

Terminal Form :

Flat

Terminal Finish :

MATTE TIN

Current - Test :

100mA

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

PD57018

Frequency :

945MHz

Max Output Power :

18W

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PDSO-F2

Current Rating :

2.5A

Max Operating Temperature :

165°C

Max Power Dissipation :

31.7W

Package / Case :

PowerSO-10 Exposed Bottom Pad

Mount :

Surface Mount

Packaging :

Tube

ECCN Code :

EAR99

Min Operating Temperature :

-65°C

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

1

Terminal Position :

Dual

Drain to Source Resistance :

760mOhm

Pin Count :

10

Gain :

16.5dB

Voltage - Test :

28V

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

250

Additional Feature :

High Reliability