PD57018STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Output Power :

18W

Power Dissipation :

31.7W

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

65V

Base Part Number :

PD57018

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Transistor Type :

LDMOS

Case Connection :

SOURCE

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Current Rating :

2.5A

Polarity/Channel Type :

N-Channel

Mount :

Surface Mount

Package / Case :

PowerSO-10 Exposed Bottom Pad

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gain :

16.5dB

Drain to Source Breakdown Voltage :

65V

Frequency :

945MHz

Min Operating Temperature :

-65°C

Current - Test :

100mA

Number of Pins :

3

Voltage - Test :

28V

Drain to Source Resistance :

760mOhm

Factory Lead Time :

25 Weeks

Number of Elements :

1

Max Power Dissipation :

31.7W

Pin Count :

10

Additional Feature :

High Reliability

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

250

Continuous Drain Current (ID) :

2.5A

JESD-609 Code :

e3

Element Configuration :

Single

Terminal Form :

Flat

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-F2

Max Operating Temperature :

165°C