PD57018STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Resistance :

760mOhm

Current - Test :

100mA

Package / Case :

PowerSO-10 Exposed Bottom Pad

Mount :

Surface Mount

Element Configuration :

Single

Current Rating :

2.5A

Number of Terminations :

2

Voltage - Test :

28V

Power Dissipation :

31.7W

Drain to Source Breakdown Voltage :

65V

Continuous Drain Current (ID) :

2.5A

Terminal Position :

Dual

Case Connection :

SOURCE

Peak Reflow Temperature (Cel) :

250

Polarity/Channel Type :

N-Channel

Additional Feature :

High Reliability

Terminal Finish :

MATTE TIN

Gain :

16.5dB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

ROHS3 Compliant

Transistor Type :

LDMOS

Max Operating Temperature :

165°C

Qualification Status :

Not Qualified

Transistor Application :

AMPLIFIER

Pin Count :

10

Drain to Source Voltage (Vdss) :

65V

Base Part Number :

PD57018

JESD-609 Code :

e3

Factory Lead Time :

25 Weeks

ECCN Code :

EAR99

Min Operating Temperature :

-65°C

Reach Compliance Code :

not_compliant

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-F2

Terminal Form :

Flat

Frequency :

945MHz

Max Output Power :

18W

Number of Pins :

3

Max Power Dissipation :

31.7W