PD57018

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Position :

Dual

Min Operating Temperature :

-65°C

Voltage - Rated DC :

65V

Terminal Form :

Gull wing

Power Gain :

16.5dB

Length :

7.5mm

Number of Terminations :

2

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

250

Drain to Source Resistance :

760mOhm

Current Rating :

2.5A

Number of Elements :

1

Continuous Drain Current (ID) :

2.5A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Lead Free :

Lead Free

Pin Count :

10

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Factory Lead Time :

25 Weeks

Base Part Number :

PD57018

Voltage - Test :

28V

Number of Pins :

3

Mount :

Surface Mount

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Type :

LDMOS

Power Dissipation :

31.7W

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Height :

3.5mm

Drain to Source Breakdown Voltage :

65V

Drain to Source Voltage (Vdss) :

65V

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerSO-10 Exposed Bottom Pad

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

SOURCE

Contact Plating :

Tin

Width :

9.4mm

Additional Feature :

High Reliability

Gate to Source Voltage (Vgs) :

20V

Max Output Power :

18W

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Packaging :

Tube

Current - Test :

100mA

Max Operating Temperature :

165°C

Frequency :

945MHz

Max Power Dissipation :

31.7W

Min Breakdown Voltage :

65V

Element Configuration :

Single

JESD-30 Code :

R-PDSO-G2