PD57018

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Base Part Number :

PD57018

Peak Reflow Temperature (Cel) :

250

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

65V

Drain to Source Voltage (Vdss) :

65V

JESD-609 Code :

e3

Number of Pins :

3

Frequency :

945MHz

Element Configuration :

Single

Factory Lead Time :

25 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

9.4mm

Max Power Dissipation :

31.7W

Power Gain :

16.5dB

Min Breakdown Voltage :

65V

Power Dissipation :

31.7W

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Reliability

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

JESD-30 Code :

R-PDSO-G2

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-65°C

Current Rating :

2.5A

Terminal Form :

Gull wing

Max Operating Temperature :

165°C

Terminal Position :

Dual

Length :

7.5mm

Package / Case :

PowerSO-10 Exposed Bottom Pad

Packaging :

Tube

Mount :

Surface Mount

Number of Elements :

1

Height :

3.5mm

Continuous Drain Current (ID) :

2.5A

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Type :

LDMOS

Transistor Application :

AMPLIFIER

Case Connection :

SOURCE

Current - Test :

100mA

ECCN Code :

EAR99

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Voltage - Test :

28V

Max Output Power :

18W

Pin Count :

10

Drain to Source Resistance :

760mOhm

Voltage - Rated DC :

65V