PD57002S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Element Configuration :

Single

Package / Case :

PowerSO-10 Exposed Bottom Pad

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

65V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mount :

Surface Mount

Transistor Type :

LDMOS

Packaging :

Tube

Number of Elements :

1

Case Connection :

SOURCE

Polarity/Channel Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Frequency :

960MHz

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

0.25A

Current - Test :

10mA

Transistor Application :

AMPLIFIER

Current Rating :

250mA

Max Operating Temperature :

165°C

Max Output Power :

2W

Voltage - Test :

28V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F2

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

4.75W

Base Part Number :

PD57002

Pin Count :

10

Number of Pins :

4

Gain :

15dB

Number of Terminations :

2

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

65V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Min Operating Temperature :

-65°C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

High Reliability

Terminal Form :

Flat

Max Power Dissipation :

4.75W

Continuous Drain Current (ID) :

250mA