PD57006STR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

JESD-30 Code :

R-PDSO-F2

Number of Terminations :

2

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Max Output Power :

6W

Factory Lead Time :

25 Weeks

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Test :

28V

Current - Test :

70mA

Max Power Dissipation :

20W

Continuous Drain Current (ID) :

1A

Max Operating Temperature :

165°C

Min Operating Temperature :

-65°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Transistor Type :

LDMOS

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

65V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

1A

Transistor Application :

AMPLIFIER

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

NICKEL PALLADIUM GOLD

Case Connection :

SOURCE

Drain to Source Voltage (Vdss) :

65V

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

JESD-609 Code :

e4

Gain :

15dB

Power Dissipation :

20W

Frequency :

945MHz

Current Rating :

1A

Base Part Number :

PD57006

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)

Number of Pins :

3

ECCN Code :

EAR99

Pin Count :

10

Element Configuration :

Single