PD57006S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Drain Current-Max (Abs) (ID) :

1A

JESD-609 Code :

e3

Package / Case :

PowerSO-10 Exposed Bottom Pad

Frequency :

945MHz

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

20W

Terminal Form :

Flat

Element Configuration :

Single

Min Breakdown Voltage :

65V

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Transistor Application :

AMPLIFIER

Case Connection :

SOURCE

Current Rating :

1A

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

250

Max Output Power :

6W

Max Power Dissipation :

20W

Number of Pins :

4

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Min Operating Temperature :

-65°C

Voltage - Test :

28V

Continuous Drain Current (ID) :

1A

Drain to Source Breakdown Voltage :

65V

Mount :

Surface Mount

Power Gain :

15dB

JESD-30 Code :

R-PDSO-F2

Lead Free :

Lead Free

Number of Elements :

1

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

65V

Base Part Number :

PD57006

Max Operating Temperature :

165°C

Pin Count :

10

Terminal Finish :

MATTE TIN

Current - Test :

70mA

Transistor Type :

LDMOS