PD57006S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Current - Test :

70mA

Transistor Type :

LDMOS

JESD-30 Code :

R-PDSO-F2

Number of Elements :

1

Element Configuration :

Single

Max Power Dissipation :

20W

Package / Case :

PowerSO-10 Exposed Bottom Pad

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Packaging :

Tube

Drain to Source Voltage (Vdss) :

65V

Base Part Number :

PD57006

Current Rating :

1A

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Flat

Pin Count :

10

Transistor Application :

AMPLIFIER

Continuous Drain Current (ID) :

1A

Terminal Finish :

MATTE TIN

Min Breakdown Voltage :

65V

ECCN Code :

EAR99

Max Operating Temperature :

165°C

Power Dissipation :

20W

RoHS Status :

ROHS3 Compliant

Voltage - Test :

28V

Power Gain :

15dB

Case Connection :

SOURCE

Drain Current-Max (Abs) (ID) :

1A

Min Operating Temperature :

-65°C

Number of Pins :

4

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

65V

Frequency :

945MHz

Max Output Power :

6W

Peak Reflow Temperature (Cel) :

250

Lead Free :

Lead Free