PD57006S-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Power Dissipation :

20W

Operating Mode :

ENHANCEMENT MODE

Case Connection :

SOURCE

JESD-609 Code :

e3

Terminal Position :

Dual

Number of Terminations :

2

Max Power Dissipation :

20W

Peak Reflow Temperature (Cel) :

250

JESD-30 Code :

R-PDSO-F2

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

4

Voltage - Test :

28V

Min Operating Temperature :

-65°C

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Power Gain :

15dB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

MATTE TIN

Drain to Source Breakdown Voltage :

65V

Lead Free :

Lead Free

Transistor Type :

LDMOS

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Frequency :

945MHz

Current - Test :

70mA

Terminal Form :

Flat

Max Operating Temperature :

165°C

Radiation Hardening :

No

Current Rating :

1A

Drain Current-Max (Abs) (ID) :

1A

Package / Case :

PowerSO-10 Exposed Bottom Pad

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

65V

Min Breakdown Voltage :

65V

ECCN Code :

EAR99

Pin Count :

10

Max Output Power :

6W

Base Part Number :

PD57006

Transistor Application :

AMPLIFIER

Continuous Drain Current (ID) :

1A

Time@Peak Reflow Temperature-Max (s) :

30