PD57002
- Mfr.Part #
- PD57002
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10 Exposed Bottom Pad
- Datasheet
- Download
- Description
- FET RF 65V 960MHZ PWRSO-10
- Stock
- 131
- In Stock :
- 131
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Number of Terminations :
- 2
- Pbfree Code :
- No
- Drain Current-Max (Abs) (ID) :
- 0.25A
- Power Dissipation :
- 4.75W
- Transistor Type :
- LDMOS
- Case Connection :
- SOURCE
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- Dual
- Gain :
- 15dB
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 65V
- Pin Count :
- 2
- Voltage - Test :
- 28V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Package / Case :
- PowerSO-10 Exposed Bottom Pad
- JESD-609 Code :
- e0
- Min Operating Temperature :
- -65°C
- Number of Pins :
- 10
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Reach Compliance Code :
- not_compliant
- Max Operating Temperature :
- 150°C
- Current - Test :
- 10mA
- Power - Output :
- 2W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 250mA
- Base Part Number :
- PD57002
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- High Reliability
- Max Power Dissipation :
- 4.75W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Continuous Drain Current (ID) :
- 250mA
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 65V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- AMPLIFIER
- Frequency :
- 960MHz
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-G2
- Polarity/Channel Type :
- N-Channel
- Datasheets
- PD57002
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PD57002 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
PD57002 Description
PD57002 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes PD57002 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD57002 has the excellent thermal stability.
PD57002 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
PD57002 Applications
ISM applications
DC large signal applications
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