PD57002
- Mfr.Part #
- PD57002
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10 Exposed Bottom Pad
- Datasheet
- Download
- Description
- FET RF 65V 960MHZ PWRSO-10
- Stock
- 131
- In Stock :
- 131
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Max Power Dissipation :
- 4.75W
- Power Dissipation :
- 4.75W
- JESD-30 Code :
- R-PDSO-G2
- Case Connection :
- SOURCE
- Base Part Number :
- PD57002
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Package / Case :
- PowerSO-10 Exposed Bottom Pad
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mount :
- Surface Mount
- Frequency :
- 960MHz
- Polarity/Channel Type :
- N-Channel
- Number of Terminations :
- 2
- Packaging :
- Tube
- Pbfree Code :
- No
- Drain to Source Voltage (Vdss) :
- 65V
- Pin Count :
- 2
- Number of Pins :
- 10
- Terminal Form :
- Gull wing
- Additional Feature :
- High Reliability
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Operating Temperature :
- 150°C
- Reach Compliance Code :
- not_compliant
- Voltage - Test :
- 28V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 0.25A
- Continuous Drain Current (ID) :
- 250mA
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Gain :
- 15dB
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Min Operating Temperature :
- -65°C
- Current - Test :
- 10mA
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Drain to Source Breakdown Voltage :
- 65V
- Current Rating :
- 250mA
- Power - Output :
- 2W
- Transistor Type :
- LDMOS
- Datasheets
- PD57002
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PD57002 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
PD57002 Description
PD57002 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes PD57002 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD57002 has the excellent thermal stability.
PD57002 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
PD57002 Applications
ISM applications
DC large signal applications
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