PD57002-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Position :

Dual

Max Power Dissipation :

4.75W

Drain to Source Voltage (Vdss) :

65V

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-Channel

Max Operating Temperature :

165°C

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

AMPLIFIER

Voltage - Test :

28V

Voltage - Rated DC :

65V

Max Output Power :

2W

Case Connection :

SOURCE

Number of Pins :

3

Pin Count :

10

Terminal Finish :

Matte Tin (Sn) - annealed

Radiation Hardening :

No

Element Configuration :

Single

Current - Test :

10mA

Continuous Drain Current (ID) :

250mA

Frequency :

960MHz

Number of Terminations :

2

Power Dissipation :

4.75W

Packaging :

Tube

Min Operating Temperature :

-65°C

JESD-30 Code :

R-PDSO-G2

ECCN Code :

EAR99

Current Rating :

250mA

Lead Free :

Lead Free

Additional Feature :

High Reliability

Base Part Number :

PD57002

JESD-609 Code :

e3

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.25A

Peak Reflow Temperature (Cel) :

250

Package / Case :

PowerSO-10 Exposed Bottom Pad

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Power Gain :

15dB

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Min Breakdown Voltage :

65V

Transistor Type :

LDMOS

Drain to Source Breakdown Voltage :

65V