PD57002-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Power Dissipation :

4.75W

JESD-30 Code :

R-PDSO-G2

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Power Dissipation :

4.75W

Current Rating :

250mA

Max Output Power :

2W

Drain to Source Breakdown Voltage :

65V

Transistor Type :

LDMOS

Min Operating Temperature :

-65°C

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Pin Count :

10

Max Operating Temperature :

165°C

Peak Reflow Temperature (Cel) :

250

Drain Current-Max (Abs) (ID) :

0.25A

Frequency :

960MHz

Mount :

Surface Mount

Voltage - Test :

28V

Additional Feature :

High Reliability

Radiation Hardening :

No

Case Connection :

SOURCE

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

65V

Terminal Position :

Dual

Terminal Form :

Gull wing

Number of Terminations :

2

Power Gain :

15dB

Continuous Drain Current (ID) :

250mA

Terminal Finish :

Matte Tin (Sn) - annealed

Voltage - Rated DC :

65V

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

PD57002

Current - Test :

10mA

Package / Case :

PowerSO-10 Exposed Bottom Pad

Number of Pins :

3

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Min Breakdown Voltage :

65V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

FET Technology :

METAL-OXIDE SEMICONDUCTOR