PD57002-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain Current-Max (Abs) (ID) :

0.25A

Gate to Source Voltage (Vgs) :

20V

Package / Case :

PowerSO-10 Exposed Bottom Pad

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

65V

Max Power Dissipation :

4.75W

Pin Count :

10

Transistor Application :

AMPLIFIER

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Current - Test :

10mA

Case Connection :

SOURCE

Base Part Number :

PD57002

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

250

Time@Peak Reflow Temperature-Max (s) :

30

Max Output Power :

2W

Voltage - Rated DC :

65V

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

65V

Terminal Position :

Dual

Number of Terminations :

2

Max Operating Temperature :

165°C

Terminal Finish :

Matte Tin (Sn) - annealed

Continuous Drain Current (ID) :

250mA

Min Breakdown Voltage :

65V

Frequency :

960MHz

JESD-30 Code :

R-PDSO-G2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Test :

28V

Power Dissipation :

4.75W

Current Rating :

250mA

Min Operating Temperature :

-65°C

Power Gain :

15dB

Mount :

Surface Mount

Terminal Form :

Gull wing

ECCN Code :

EAR99

Element Configuration :

Single

Transistor Type :

LDMOS

Packaging :

Tube