PD57006TR-E
- Mfr.Part #
- PD57006TR-E
- Manufacturer
- STMicroelectronics
- Package / Case
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Datasheet
- Download
- Description
- TRANSISTOR RF POWERSO-10
- Stock
- 1,353
- In Stock :
- 1,353
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - RF
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 20W
- Max Operating Temperature :
- 165°C
- Continuous Drain Current (ID) :
- 1A
- Package / Case :
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Pin Count :
- 10
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Max Output Power :
- 6W
- Transistor Type :
- LDMOS
- Voltage - Test :
- 28V
- Number of Pins :
- 4
- Max Power Dissipation :
- 20W
- Qualification Status :
- Not Qualified
- Case Connection :
- SOURCE
- Base Part Number :
- PD57006
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Current Rating :
- 1A
- Terminal Position :
- Dual
- Drain Current-Max (Abs) (ID) :
- 1A
- Frequency :
- 945MHz
- Transistor Application :
- AMPLIFIER
- Gain :
- 15dB
- Time@Peak Reflow Temperature-Max (s) :
- 30
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-G2
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 250
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Current - Test :
- 70mA
- Drain to Source Voltage (Vdss) :
- 65V
- Min Operating Temperature :
- -65°C
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 65V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Element Configuration :
- Single
- Datasheets
- PD57006TR-E

PD57006TR-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at
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