PD57006TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

20W

Max Operating Temperature :

165°C

Continuous Drain Current (ID) :

1A

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Pin Count :

10

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Max Output Power :

6W

Transistor Type :

LDMOS

Voltage - Test :

28V

Number of Pins :

4

Max Power Dissipation :

20W

Qualification Status :

Not Qualified

Case Connection :

SOURCE

Base Part Number :

PD57006

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

JESD-609 Code :

e3

Mount :

Surface Mount

Current Rating :

1A

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

1A

Frequency :

945MHz

Transistor Application :

AMPLIFIER

Gain :

15dB

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G2

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

250

Terminal Finish :

Matte Tin (Sn) - annealed

Current - Test :

70mA

Drain to Source Voltage (Vdss) :

65V

Min Operating Temperature :

-65°C

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

65V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Element Configuration :

Single