PD57006TR-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

65V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn) - annealed

Continuous Drain Current (ID) :

1A

Case Connection :

SOURCE

Base Part Number :

PD57006

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

1A

Mount :

Surface Mount

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Max Power Dissipation :

20W

Terminal Position :

Dual

Transistor Type :

LDMOS

Polarity/Channel Type :

N-Channel

Max Output Power :

6W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Voltage (Vdss) :

65V

JESD-30 Code :

R-PDSO-G2

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

AMPLIFIER

Current Rating :

1A

Power Dissipation :

20W

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Voltage - Test :

28V

Pin Count :

10

JESD-609 Code :

e3

Max Operating Temperature :

165°C

Min Operating Temperature :

-65°C

Frequency :

945MHz

Gain :

15dB

Packaging :

Tape and Reel (TR)

Package / Case :

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

Peak Reflow Temperature (Cel) :

250

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Current - Test :

70mA

Number of Pins :

4