NTB35N15T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

37A

Lead Free :

Lead Free

Published :

2005

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.05Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

2.9 V

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

FET Type :

N-Channel

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

150V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Length :

9.65mm

Turn On Delay Time :

20 ns

Rise Time :

125ns

Surface Mount :

yes

Pin Count :

3

Contact Plating :

Tin

Factory Lead Time :

2 Weeks

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

50m Ω @ 18.5A, 10V

Power Dissipation :

178W

Element Configuration :

Single

Fall Time (Typ) :

120 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

37A Ta

Time@Peak Reflow Temperature-Max (s) :

40

Avalanche Energy Rating (Eas) :

700 mJ

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Height :

4.83mm

Radiation Hardening :

No

Current Rating :

37A

Power Dissipation-Max :

2W Ta 178W Tj

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

150V

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

90 ns

Width :

10.29mm

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING