NTB35N15T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Length :

9.65mm

Continuous Drain Current (ID) :

37A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.83mm

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

2.9 V

Fall Time (Typ) :

120 ns

Current - Continuous Drain (Id) @ 25°C :

37A Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

FET Type :

N-Channel

Number of Elements :

1

Turn-Off Delay Time :

90 ns

Radiation Hardening :

No

Pbfree Code :

yes

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Rise Time :

125ns

Power Dissipation-Max :

2W Ta 178W Tj

Element Configuration :

Single

Current Rating :

37A

Width :

10.29mm

Number of Pins :

3

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.05Ohm

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

178W

Contact Plating :

Tin

Voltage - Rated DC :

150V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Surface Mount :

yes

Factory Lead Time :

2 Weeks

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

150V

Published :

2005

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

50m Ω @ 18.5A, 10V

Turn On Delay Time :

20 ns

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

700 mJ