NTB35N15T4
- Mfr.Part #
- NTB35N15T4
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 37A D2PAK
- Stock
- 5,864
- In Stock :
- 5,864
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2005
- Current Rating :
- 37A
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 18.5A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pin Count :
- 3
- Voltage - Rated DC :
- 150V
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 178W
- Height :
- 4.83mm
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 2 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSSO-G2
- Fall Time (Typ) :
- 120 ns
- Turn On Delay Time :
- 20 ns
- Turn-Off Delay Time :
- 90 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 37A
- FET Type :
- N-Channel
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 150V
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Length :
- 9.65mm
- Nominal Vgs :
- 2.9 V
- Power Dissipation-Max :
- 2W Ta 178W Tj
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 37A Ta
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Rise Time :
- 125ns
- Width :
- 10.29mm
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Drain-source On Resistance-Max :
- 0.05Ohm
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 3200pF @ 25V
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- NTB35N15T4

N-Channel Tape & Reel (TR) 50m Ω @ 18.5A, 10V ±20V 3200pF @ 25V 100nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB35N15T4G Description
NTB35N15T4G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 150V. The operating temperature of the NTB35N15T4G is -55°C~150°C TJ and its maximum power dissipation is 178W. NTB35N15T4G has 3 pins and it is available in Tape & Reel (TR) packaging way.
NTB35N15T4G Features
-
Source?to?Drain Diode Recovery Time Comparable to a Discrete
-
Fast Recovery Diode
-
Avalanche Energy Specified
-
IDSS and RDS(on) Specified at Elevated Temperature
-
Mounting Information Provided for the D2PAK Package
-
Pb?Free Packages are Available
NTB35N15T4G Applications
-
PWM Motor Controls
-
Power Supplies
-
Converters
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