NTB30N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

450 mJ

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

JESD-609 Code :

e3

Power Dissipation-Max :

2W Ta 214W Tc

Turn-Off Delay Time :

82 ns

RoHS Status :

RoHS Compliant

Number of Elements :

1

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Rise Time :

70ns

Continuous Drain Current (ID) :

30A

Voltage - Rated DC :

200V

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

90A

Element Configuration :

Single

Number of Terminations :

2

Pin Count :

3

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

214W

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

Published :

2005

Current Rating :

30A

Drain to Source Breakdown Voltage :

200V

Input Capacitance (Ciss) (Max) @ Vds :

2335pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

81m Ω @ 15A, 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Packaging :

Tube

Fall Time (Typ) :

88 ns

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing