NTB30N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Number of Elements :

1

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

200V

Case Connection :

DRAIN

Terminal Form :

Gull wing

Turn-Off Delay Time :

82 ns

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

2335pF @ 25V

Avalanche Energy Rating (Eas) :

450 mJ

JESD-30 Code :

R-PSSO-G2

Voltage - Rated DC :

200V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Rds On (Max) @ Id, Vgs :

81m Ω @ 15A, 10V

Power Dissipation :

214W

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

90A

Vgs (Max) :

±30V

Terminal Finish :

Tin (Sn)

Current Rating :

30A

Transistor Element Material :

SILICON

Element Configuration :

Single

Number of Terminations :

2

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Rise Time :

70ns

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Mount :

Surface Mount

Packaging :

Tube

Continuous Drain Current (ID) :

30A

Power Dissipation-Max :

2W Ta 214W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

88 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING