NTB30N06LT4G
- Mfr.Part #
- NTB30N06LT4G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A D2PAK
- Stock
- 14,501
- In Stock :
- 14,501
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 30A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Power Dissipation :
- 88.2W
- Number of Elements :
- 1
- Fall Time (Typ) :
- 62 ns
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 60V
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 90A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1150pF @ 25V
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 30A Ta
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 200ns
- Drain-source On Resistance-Max :
- 0.046Ohm
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 5V
- Current Rating :
- 30A
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 46m Ω @ 15A, 5V
- Number of Pins :
- 3
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 60V
- Published :
- 2005
- Turn-Off Delay Time :
- 15.6 ns
- Gate to Source Voltage (Vgs) :
- 15V
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±15V
- Power Dissipation-Max :
- 88.2W Tc
- Datasheets
- NTB30N06LT4G
NTB30N06LT4G Documents

N-Channel Tape & Reel (TR) 46m Ω @ 15A, 5V ±15V 1150pF @ 25V 32nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB30N06LT4G Overview
A device's maximal input capacitance is 1150pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15.6 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 90A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.This device reduces its overall power consumption by using drive voltage (5V).
NTB30N06LT4G Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 15.6 ns
based on its rated peak drain current 90A.
NTB30N06LT4G Applications
There are a lot of ON Semiconductor
NTB30N06LT4G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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