NTB30N06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Fall Time (Typ) :

62 ns

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 25V

Number of Elements :

1

Element Configuration :

Single

Power Dissipation :

88.2W

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

46m Ω @ 15A, 5V

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

30A

Pulsed Drain Current-Max (IDM) :

90A

Mount :

Surface Mount

Power Dissipation-Max :

88.2W Tc

Turn-Off Delay Time :

15.6 ns

Vgs (Max) :

±15V

Number of Terminations :

2

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

5V

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.046Ohm

JESD-609 Code :

e3

Published :

2005

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Pins :

3

Pin Count :

3

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

60V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

30A

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

15V

Rise Time :

200ns