NTB30N06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Continuous Drain Current (ID) :

30A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

RoHS Compliant

Element Configuration :

Single

JESD-609 Code :

e3

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

88.2W Tc

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

88.2W

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

60V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

60V

Pin Count :

3

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

46m Ω @ 15A, 5V

Published :

2005

Drive Voltage (Max Rds On,Min Rds On) :

5V

Transistor Element Material :

SILICON

Rise Time :

200ns

Number of Pins :

3

Turn-Off Delay Time :

15.6 ns

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Vgs (Max) :

±15V

Fall Time (Typ) :

62 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

90A

Gate to Source Voltage (Vgs) :

15V

Current Rating :

30A

Drain-source On Resistance-Max :

0.046Ohm