NTB30N06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Turn-Off Delay Time :

15.6 ns

Mounting Type :

Surface Mount

Power Dissipation-Max :

88.2W Tc

Vgs (Max) :

±15V

Mount :

Surface Mount

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Fall Time (Typ) :

62 ns

Voltage - Rated DC :

60V

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Element Configuration :

Single

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Current Rating :

30A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Pbfree Code :

yes

Published :

2005

Rise Time :

200ns

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 25V

Drain-source On Resistance-Max :

0.046Ohm

Continuous Drain Current (ID) :

30A

Power Dissipation :

88.2W

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Rds On (Max) @ Id, Vgs :

46m Ω @ 15A, 5V

Pulsed Drain Current-Max (IDM) :

90A

Gate to Source Voltage (Vgs) :

15V

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA