NTB30N06LT4G
- Mfr.Part #
- NTB30N06LT4G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A D2PAK
- Stock
- 14,501
- In Stock :
- 14,501
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 30A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- RoHS Status :
- RoHS Compliant
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 88.2W Tc
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 5V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 88.2W
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 60V
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 60V
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 46m Ω @ 15A, 5V
- Published :
- 2005
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Transistor Element Material :
- SILICON
- Rise Time :
- 200ns
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 15.6 ns
- Current - Continuous Drain (Id) @ 25°C :
- 30A Ta
- Vgs (Max) :
- ±15V
- Fall Time (Typ) :
- 62 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1150pF @ 25V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 90A
- Gate to Source Voltage (Vgs) :
- 15V
- Current Rating :
- 30A
- Drain-source On Resistance-Max :
- 0.046Ohm
- Datasheets
- NTB30N06LT4G
NTB30N06LT4G Documents

N-Channel Tape & Reel (TR) 46m Ω @ 15A, 5V ±15V 1150pF @ 25V 32nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB30N06LT4G Overview
A device's maximal input capacitance is 1150pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15.6 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 90A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.This device reduces its overall power consumption by using drive voltage (5V).
NTB30N06LT4G Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 15.6 ns
based on its rated peak drain current 90A.
NTB30N06LT4G Applications
There are a lot of ON Semiconductor
NTB30N06LT4G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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