NTB30N06LG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

30A

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Rds On (Max) @ Id, Vgs :

46m Ω @ 15A, 5V

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

15V

Transistor Element Material :

SILICON

Element Configuration :

Single

HTS Code :

8541.29.00.95

Drive Voltage (Max Rds On,Min Rds On) :

5V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Lifecycle Status :

OBSOLETE (Last Updated: 4 days ago)

Mounting Type :

Surface Mount

Power Dissipation :

88.2W

RoHS Status :

RoHS Compliant

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

101 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±15V

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

90A

Rise Time :

200ns

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Voltage - Rated DC :

60V

JESD-609 Code :

e3

Number of Elements :

1

Turn-Off Delay Time :

15.6 ns

Fall Time (Typ) :

62 ns

FET Type :

N-Channel

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain-source On Resistance-Max :

0.046Ohm

Pin Count :

3

Continuous Drain Current (ID) :

30A

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

88.2W Tc

Operating Temperature :

-55°C~175°C TJ