NTB35N15G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Turn-Off Delay Time :

90 ns

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

37A Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Packaging :

Tube

Element Configuration :

Single

Power Dissipation-Max :

2W Ta 178W Tj

Pin Count :

3

Fall Time (Typ) :

120 ns

Rds On (Max) @ Id, Vgs :

50m Ω @ 18.5A, 10V

Drain to Source Breakdown Voltage :

150V

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

JESD-609 Code :

e3

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

700 mJ

Terminal Form :

Gull wing

Published :

2005

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

37A

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

111A

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Surface Mount :

yes

Drain-source On Resistance-Max :

0.05Ohm

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Rise Time :

125ns

Voltage - Rated DC :

150V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

178W

Number of Pins :

3

Transistor Application :

SWITCHING

Current Rating :

37A

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Number of Elements :

1