NTB35N15G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

50m Ω @ 18.5A, 10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Rise Time :

125ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Published :

2005

Current Rating :

37A

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.05Ohm

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

111A

Qualification Status :

Not Qualified

Fall Time (Typ) :

120 ns

Voltage - Rated DC :

150V

Current - Continuous Drain (Id) @ 25°C :

37A Ta

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

150V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

FET Type :

N-Channel

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

90 ns

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

700 mJ

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Transistor Application :

SWITCHING

Surface Mount :

yes

Power Dissipation-Max :

2W Ta 178W Tj

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

Number of Pins :

3

Case Connection :

DRAIN

Power Dissipation :

178W

Continuous Drain Current (ID) :

37A