NTB35N15G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

120 ns

Vgs (Max) :

±20V

Number of Elements :

1

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Current Rating :

37A

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

150V

Rise Time :

125ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Drain-source On Resistance-Max :

0.05Ohm

Current - Continuous Drain (Id) @ 25°C :

37A Ta

Published :

2005

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

50m Ω @ 18.5A, 10V

Case Connection :

DRAIN

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

178W

Turn-Off Delay Time :

90 ns

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

150V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

111A

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 25V

ECCN Code :

EAR99

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Avalanche Energy Rating (Eas) :

700 mJ

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

37A

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Element Configuration :

Single

Number of Terminations :

2

Power Dissipation-Max :

2W Ta 178W Tj