NTB30N20T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

30A

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2.335pF @ 25V

Pulsed Drain Current-Max (IDM) :

90A

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

2W Ta 214W Tc

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

200V

Drain-source On Resistance-Max :

0.081Ohm

Drain to Source Voltage (Vdss) :

200V

Pin Count :

3

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

81m Ω @ 15A, 10V

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Avalanche Energy Rating (Eas) :

450 mJ

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN