NTB30N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Rise Time :

200ns

Continuous Drain Current (ID) :

30A

Mount :

Surface Mount

Current Rating :

30A

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

88.2W

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Peak Reflow Temperature (Cel) :

235

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Voltage - Rated DC :

60V

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

JESD-609 Code :

e0

Rds On (Max) @ Id, Vgs :

46m Ω @ 15A, 5V

Drive Voltage (Max Rds On,Min Rds On) :

5V

HTS Code :

8541.29.00.95

FET Type :

N-Channel

Fall Time (Typ) :

62 ns

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

90A

Power Dissipation-Max :

88.2W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 25V

Mounting Type :

Surface Mount

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Avalanche Energy Rating (Eas) :

101 mJ

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.046Ohm

Pin Count :

3

Transistor Application :

SWITCHING

Published :

2006

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

15V

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

15.6 ns

Vgs (Max) :

±15V