NTB30N06LT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

240

Fall Time (Typ) :

62 ns

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Continuous Drain Current (ID) :

30A

Number of Pins :

3

Current Rating :

30A

Voltage - Rated DC :

60V

Terminal Finish :

Tin/Lead (Sn80Pb20)

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 25V

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

5V

Element Configuration :

Single

HTS Code :

8541.29.00.95

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

FET Type :

N-Channel

Lifecycle Status :

OBSOLETE (Last Updated: 4 days ago)

Drain-source On Resistance-Max :

0.046Ohm

Avalanche Energy Rating (Eas) :

101 mJ

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

46m Ω @ 15A, 5V

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Pbfree Code :

No

Turn-Off Delay Time :

15.6 ns

Number of Elements :

1

Pin Count :

3

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Rise Time :

200ns

Published :

2006

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Drain to Source Breakdown Voltage :

60V

Power Dissipation :

88.2W

Pulsed Drain Current-Max (IDM) :

90A

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

88.2W Tc

Vgs (Max) :

±15V