NTB30N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

HTS Code :

8541.29.00.95

Pulsed Drain Current-Max (IDM) :

90A

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Drain to Source Breakdown Voltage :

60V

Published :

2006

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 250μA

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

235

Current Rating :

30A

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Terminal Form :

Gull wing

Rise Time :

200ns

Pin Count :

3

Avalanche Energy Rating (Eas) :

101 mJ

FET Type :

N-Channel

Number of Pins :

3

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±15V

Power Dissipation :

88.2W

Fall Time (Typ) :

62 ns

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

15V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V

Voltage - Rated DC :

60V

JESD-609 Code :

e0

Power Dissipation-Max :

88.2W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 25V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Number of Terminations :

2

Drain-source On Resistance-Max :

0.046Ohm

Element Configuration :

Single

Turn-Off Delay Time :

15.6 ns

Continuous Drain Current (ID) :

30A

Rds On (Max) @ Id, Vgs :

46m Ω @ 15A, 5V