NTB30N06T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.042Ohm

Rds On (Max) @ Id, Vgs :

42m Ω @ 15A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Surface Mount

Power Dissipation :

88.2W

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

27A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

36ns

Power Dissipation-Max :

88.2W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

60V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Current Rating :

30A

Fall Time (Typ) :

31 ns

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Peak Reflow Temperature (Cel) :

235

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

60V

Published :

2004

Avalanche Energy Rating (Eas) :

101 mJ

Pulsed Drain Current-Max (IDM) :

80A

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

1

Element Configuration :

Single

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

27A Ta

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

Pin Count :

3

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

HTS Code :

8541.29.00.95

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

24 ns

Mounting Type :

Surface Mount

JESD-609 Code :

e0