NTB30N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Number of Elements :

1

Drain-source On Resistance-Max :

0.042Ohm

Pulsed Drain Current-Max (IDM) :

80A

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

27A Ta

Drain to Source Voltage (Vdss) :

60V

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

COMMERCIAL

Drain Current-Max (Abs) (ID) :

27A

Pbfree Code :

No

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

DS Breakdown Voltage-Min :

60V

Avalanche Energy Rating (Eas) :

101 mJ

Case Connection :

DRAIN

Power Dissipation-Max :

88.2W Tc

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

42m Ω @ 15A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Pin Count :

3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Transistor Element Material :

SILICON

Surface Mount :

yes

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1.2pF @ 25V

RoHS Status :

ROHS3 Compliant