NTB30N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

1.2pF @ 25V

Case Connection :

DRAIN

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

60V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

80A

Power Dissipation-Max :

88.2W Tc

Number of Terminations :

2

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.042Ohm

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

27A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

42m Ω @ 15A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

27A Ta

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

101 mJ

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260