NTB30N06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Number of Elements :

1

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

88.2W Tc

Turn-Off Delay Time :

24 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2005

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

42m Ω @ 15A, 10V

Pulsed Drain Current-Max (IDM) :

80A

Current - Continuous Drain (Id) @ 25°C :

27A Ta

Number of Terminations :

2

Continuous Drain Current (ID) :

27A

Current Rating :

27A

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.042Ohm

Mounting Type :

Surface Mount

Voltage - Rated DC :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

36ns

Lead Free :

Lead Free

Power Dissipation :

88.2W

Fall Time (Typ) :

31 ns

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

HTS Code :

8541.29.00.95

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

101 mJ

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)