NSS40600CF8T1G

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Mfr.Part #
NSS40600CF8T1G
Manufacturer
onsemi
Package / Case
8-SMD, Flat Lead
Datasheet
Download
Description
TRANS PNP 40V 6A CHIPFET
Stock
6,915
In Stock :
6,915

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
100MHz
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Max Power Dissipation :
830mW
Terminal Position :
Dual
Factory Lead Time :
6 Weeks
Frequency :
100MHz
Terminal Form :
C BEND
Packaging :
Tape and Reel (TR)
Max Collector Current :
6A
Pin Count :
8
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Collector Base Voltage (VCBO) :
40V
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
220mV @ 400mA, 4A
Collector Emitter Voltage (VCEO) :
40V
Transistor Type :
PNP
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
220 @ 1A 2V
Halogen Free :
Halogen Free
Mounting Type :
Surface Mount
Number of Terminations :
8
Surface Mount :
yes
Current - Collector Cutoff (Max) :
10μA
Radiation Hardening :
No
Package / Case :
8-SMD, Flat Lead
Power Dissipation :
1.4W
Transistor Element Material :
SILICON
hFE Min :
250
Polarity/Channel Type :
PNP
Terminal Finish :
Tin (Sn)
Published :
2007
Collector Emitter Breakdown Voltage :
40V
Collector Emitter Saturation Voltage :
180mV
Emitter Base Voltage (VEBO) :
7V
Gain Bandwidth Product :
100MHz
ECCN Code :
EAR99
Number of Elements :
1
Number of Pins :
8
Turn On Time-Max (ton) :
340ns
Power - Max :
830mW
Datasheets
NSS40600CF8T1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS40600CF8T1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:8, Package / Case:8-SMD, Flat Lead, Number of Pins:8, NSS40600CF8T1G pinout, NSS40600CF8T1G datasheet PDF, NSS40600CF8T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS40600CF8T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS40600CF8T1G


PNP -55°C~150°C TJ 10μA 1 Elements 8 Terminations SILICON PNP 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount

NSS40600CF8T1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 1A 2V.With a collector emitter saturation voltage of 180mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 400mA, 4A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 6A volts at its maximum.

NSS40600CF8T1G Features


the DC current gain for this device is 220 @ 1A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz


NSS40600CF8T1G Applications


There are a lot of ON Semiconductor
NSS40600CF8T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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