NSS40600CF8T1G
- Mfr.Part #
- NSS40600CF8T1G
- Manufacturer
- onsemi
- Package / Case
- 8-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS PNP 40V 6A CHIPFET
- Stock
- 6,915
- In Stock :
- 6,915
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 830mW
- Terminal Position :
- Dual
- Factory Lead Time :
- 6 Weeks
- Frequency :
- 100MHz
- Terminal Form :
- C BEND
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 6A
- Pin Count :
- 8
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 40V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 400mA, 4A
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 1A 2V
- Halogen Free :
- Halogen Free
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 8
- Surface Mount :
- yes
- Current - Collector Cutoff (Max) :
- 10μA
- Radiation Hardening :
- No
- Package / Case :
- 8-SMD, Flat Lead
- Power Dissipation :
- 1.4W
- Transistor Element Material :
- SILICON
- hFE Min :
- 250
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin (Sn)
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 40V
- Collector Emitter Saturation Voltage :
- 180mV
- Emitter Base Voltage (VEBO) :
- 7V
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Number of Pins :
- 8
- Turn On Time-Max (ton) :
- 340ns
- Power - Max :
- 830mW
- Datasheets
- NSS40600CF8T1G

PNP -55°C~150°C TJ 10μA 1 Elements 8 Terminations SILICON PNP 8-SMD, Flat Lead Tape & Reel (TR) Surface Mount
NSS40600CF8T1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 1A 2V.With a collector emitter saturation voltage of 180mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 400mA, 4A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 6A volts at its maximum.
NSS40600CF8T1G Features
the DC current gain for this device is 220 @ 1A 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 220mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS40600CF8T1G Applications
There are a lot of ON Semiconductor
NSS40600CF8T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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