NSS40300DDR2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 1A 2V

Power - Max :

653mW

Radiation Hardening :

No

Transition Frequency :

100MHz

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Number of Elements :

2

Collector Base Voltage (VCBO) :

-40V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

783mW

Number of Terminations :

8

hFE Min :

250

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

170mV

Transistor Application :

SWITCHING

Turn Off Time-Max (toff) :

530ns

Polarity :

PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Halogen Free :

Halogen Free

Gain Bandwidth Product :

100MHz

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Temperature :

-55°C~150°C TJ

Current - Collector (Ic) (Max) :

3A

Element Configuration :

Dual

Terminal Form :

Gull wing

Collector Emitter Saturation Voltage :

135mV

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

170mV @ 200mA, 2A

Number of Pins :

8

Transistor Element Material :

SILICON

Factory Lead Time :

2 Weeks

Max Collector Current :

3A

Collector Emitter Breakdown Voltage :

40V

Lead Free :

Lead Free

ECCN Code :

EAR99

Pin Count :

8

Packaging :

Tape and Reel (TR)

Published :

2008

Transistor Type :

2 PNP (Dual)

Emitter Base Voltage (VEBO) :

-7V