MBT3906DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Turn Off Time-Max (toff) :

300ns

Surface Mount :

yes

Polarity :

PNP

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Terminations :

6

Frequency :

250MHz

Transistor Type :

2 PNP (Dual)

Max Breakdown Voltage :

40V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time-Max (ton) :

70ns

Transition Frequency :

250MHz

Pin Count :

6

Max Power Dissipation :

150mW

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

-40V

REACH SVHC :

No SVHC

Element Configuration :

Dual

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Height :

1mm

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

40V

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

8 Weeks

Width :

1.35mm

Collector Base Voltage (VCBO) :

40V

hFE Min :

60

Number of Pins :

6

Length :

2.2mm

Max Collector Current :

200mA

Terminal Form :

Gull wing

Current Rating :

-200mA

Transistor Element Material :

SILICON

Published :

2007

Collector Emitter Breakdown Voltage :

40V

Contact Plating :

Tin

Base Part Number :

MBT3906D

Power Dissipation :

150mW

Gain Bandwidth Product :

250MHz

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Collector Emitter Saturation Voltage :

-400mV