MBT3906DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Pins :

6

Width :

1.35mm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Package / Case :

6-TSSOP, SC-88, SOT-363

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Height :

1mm

Max Collector Current :

200mA

Number of Terminations :

6

Transistor Type :

2 PNP (Dual)

Packaging :

Cut Tape (CT)

Collector Emitter Saturation Voltage :

-400mV

Turn Off Time-Max (toff) :

300ns

Length :

2.2mm

Collector Base Voltage (VCBO) :

40V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Collector Emitter Breakdown Voltage :

40V

REACH SVHC :

No SVHC

Voltage - Rated DC :

-40V

RoHS Status :

ROHS3 Compliant

hFE Min :

60

Lead Free :

Lead Free

Contact Plating :

Tin

Mounting Type :

Surface Mount

Base Part Number :

MBT3906D

Gain Bandwidth Product :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Frequency :

250MHz

Radiation Hardening :

No

Max Power Dissipation :

150mW

Pbfree Code :

yes

Halogen Free :

Halogen Free

Surface Mount :

yes

Turn On Time-Max (ton) :

70ns

Published :

2007

JESD-609 Code :

e3

Polarity :

PNP

Pin Count :

6

Collector Emitter Voltage (VCEO) :

40V

Current Rating :

-200mA

Element Configuration :

Dual

Max Breakdown Voltage :

40V

Number of Elements :

2

Transition Frequency :

250MHz

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON