MBT3906DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Turn Off Time-Max (toff) :

300ns

Voltage - Rated DC :

-40V

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

40V

Radiation Hardening :

No

ECCN Code :

EAR99

Max Breakdown Voltage :

40V

Turn On Time-Max (ton) :

70ns

Published :

2007

Collector Emitter Breakdown Voltage :

40V

Packaging :

Cut Tape (CT)

REACH SVHC :

No SVHC

Halogen Free :

Halogen Free

Collector Base Voltage (VCBO) :

40V

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Element Configuration :

Dual

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

MBT3906D

Collector Emitter Saturation Voltage :

-400mV

Pin Count :

6

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Length :

2.2mm

Power Dissipation :

150mW

Polarity :

PNP

Max Collector Current :

200mA

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Gain Bandwidth Product :

250MHz

Max Power Dissipation :

150mW

Width :

1.35mm

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Terminal Form :

Gull wing

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Type :

2 PNP (Dual)

Frequency :

250MHz

hFE Min :

60

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Current Rating :

-200mA

Height :

1mm

Transition Frequency :

250MHz

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Surface Mount :

yes

Transistor Application :

AMPLIFIER

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Contact Plating :

Tin