MBT3904DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

8 Weeks

Type :

GENERAL PURPOSE

Max Breakdown Voltage :

40V

Contact Plating :

Tin

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

40V

Gain Bandwidth Product :

300MHz

Current Rating :

200mA

Emitter Base Voltage (VEBO) :

6V

Number of Elements :

2

Transition Frequency :

300MHz

Collector Emitter Saturation Voltage :

300mV

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

MBT3904D

Transistor Type :

2 NPN (Dual)

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

40V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Surface Mount :

yes

Height :

990.6μm

Packaging :

Cut Tape (CT)

Turn On Time-Max (ton) :

70ns

Terminal Form :

Gull wing

Max Power Dissipation :

150mW

hFE Min :

40

Pbfree Code :

yes

Mounting Type :

Surface Mount

Transistor Application :

AMPLIFIER

Voltage - Rated DC :

40V

Published :

2007

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pin Count :

6

Number of Terminations :

6

Collector Base Voltage (VCBO) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

REACH SVHC :

No SVHC

Frequency :

300MHz

Lead Free :

Lead Free

Length :

2.1844mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

200mA

Radiation Hardening :

No

ECCN Code :

EAR99

Width :

1.3462mm