MBT35200MT2G
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- Mfr.Part #
- MBT35200MT2G
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 35V 2A 6TSOP
- Stock
- 3,654
- In Stock ：
- 3,654
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 20mA, 2A
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Frequency - Transition :
- 100MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 35V
- Package / Case :
- SOT-23-6
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1.5A 1.5V
- Power - Max :
- 625mW
- Supplier Device Package :
- 6-TSOP
- Current - Collector (Ic) (Max) :
- 2A
- Datasheets
- MBT35200MT2G
PNP 100nA SOT-23-6 Tape & Reel (TR) Surface Mount
MBT35200MT2G Overview
DC current gain in this device equals 100 @ 1.5A 1.5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 310mV @ 20mA, 2A.Product comes in 6-TSOP supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MBT35200MT2G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
the vce saturation(Max) is 310mV @ 20mA, 2A
the supplier device package of 6-TSOP
MBT35200MT2G Applications
There are a lot of Rochester Electronics, LLC
MBT35200MT2G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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