MBT3904DW1T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Radiation Hardening :

No

Turn On Time-Max (ton) :

70ns

Collector Emitter Breakdown Voltage :

40V

Max Breakdown Voltage :

40V

Length :

2.2mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Base Part Number :

MBT3904D

Current Rating :

200mA

Published :

2007

Element Configuration :

Dual

Collector Emitter Saturation Voltage :

300mV

Number of Terminations :

6

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Power Dissipation :

150mW

Transition Frequency :

300MHz

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Width :

1.35mm

Max Power Dissipation :

150mW

ECCN Code :

EAR99

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

hFE Min :

40

Transistor Element Material :

SILICON

Pin Count :

6

Voltage - Rated DC :

40V

RoHS Status :

ROHS3 Compliant

Transistor Type :

2 NPN (Dual)

Transistor Application :

AMPLIFIER

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

60V

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

6V

Height :

1mm

Number of Pins :

6

Frequency :

300MHz

JESD-609 Code :

e3

Max Collector Current :

200mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

40V

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

300MHz

Lead Free :

Lead Free