MBT3904DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

ECCN Code :

EAR99

Max Power Dissipation :

150mW

Voltage - Rated DC :

40V

Width :

1.3462mm

Collector Emitter Voltage (VCEO) :

40V

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

40V

Turn On Time-Max (ton) :

70ns

Transition Frequency :

300MHz

Transistor Element Material :

SILICON

Number of Pins :

6

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

990.6μm

Max Collector Current :

200mA

Number of Terminations :

6

Number of Elements :

2

Collector Emitter Saturation Voltage :

300mV

Gain Bandwidth Product :

300MHz

Collector Base Voltage (VCBO) :

60V

Current Rating :

200mA

Published :

2007

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Polarity :

NPN

REACH SVHC :

No SVHC

JESD-609 Code :

e3

hFE Min :

40

Surface Mount :

yes

Packaging :

Cut Tape (CT)

Power Dissipation :

150mW

Lead Free :

Lead Free

Frequency :

300MHz

Max Breakdown Voltage :

40V

Package / Case :

6-TSSOP, SC-88, SOT-363

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Length :

2.1844mm

Type :

GENERAL PURPOSE

Transistor Type :

2 NPN (Dual)

Element Configuration :

Dual

Contact Plating :

Tin

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

6V

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

8 Weeks

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Base Part Number :

MBT3904D