MBT35200MT1G
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- Mfr.Part #
- MBT35200MT1G
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 35V 2A 6TSOP
- Stock
- 110,925
- In Stock ：
- 110,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Number of Pins :
- 6
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1.5A 1.5V
- Current - Collector Cutoff (Max) :
- 100nA
- Width :
- 1.7mm
- Max Breakdown Voltage :
- 35V
- Number of Terminations :
- 6
- Pbfree Code :
- yes
- Voltage - Rated DC :
- -35V
- Height :
- 1mm
- Package / Case :
- SOT-23-6
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 20mA, 2A
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 35V
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Length :
- 3.1mm
- Base Part Number :
- MBT35200
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -2A
- Collector Emitter Saturation Voltage :
- -260mV
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Halogen Free :
- Halogen Free
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Element Configuration :
- Single
- Published :
- 2005
- Gain Bandwidth Product :
- 100MHz
- Collector Base Voltage (VCBO) :
- 55V
- Factory Lead Time :
- 13 Weeks
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 35V
- Max Collector Current :
- 2A
- Transistor Type :
- PNP
- Pin Count :
- 6
- Power - Max :
- 625mW
- Max Power Dissipation :
- 625mW
- hFE Min :
- 100
- Datasheets
- MBT35200MT1G
MBT35200MT1G Documents
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
MBT35200MT1G Overview
This device has a DC current gain of 100 @ 1.5A 1.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -260mV.A VCE saturation (Max) of 310mV @ 20mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 35V volts can be used.A maximum collector current of 2A volts is possible.
MBT35200MT1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
MBT35200MT1G Applications
There are a lot of ON Semiconductor
MBT35200MT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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