MBT35200MT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Polarity/Channel Type :

PNP

Operating Temperature :

-55°C~150°C TJ

Max Breakdown Voltage :

35V

Vce Saturation (Max) @ Ib, Ic :

310mV @ 20mA, 2A

Frequency :

100MHz

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1.5A 1.5V

Peak Reflow Temperature (Cel) :

260

Length :

3.1mm

Published :

2005

Emitter Base Voltage (VEBO) :

5V

Width :

1.7mm

hFE Min :

100

Transistor Type :

PNP

Factory Lead Time :

13 Weeks

Max Power Dissipation :

625mW

Pbfree Code :

yes

Halogen Free :

Halogen Free

Terminal Position :

Dual

Number of Terminations :

6

Power Dissipation :

1W

Collector Emitter Breakdown Voltage :

35V

Number of Elements :

1

Height :

1mm

Current Rating :

-2A

Collector Base Voltage (VCBO) :

55V

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Gain Bandwidth Product :

100MHz

Transition Frequency :

100MHz

Collector Emitter Voltage (VCEO) :

35V

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

100nA

Voltage - Rated DC :

-35V

Element Configuration :

Single

Surface Mount :

yes

ECCN Code :

EAR99

Number of Pins :

6

Collector Emitter Saturation Voltage :

-260mV

Pin Count :

6

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Base Part Number :

MBT35200

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-6

Power - Max :

625mW

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

2A

Terminal Form :

Gull wing

REACH SVHC :

No SVHC