MBT35200MT1
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- Mfr.Part #
- MBT35200MT1
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS SW PNP BIPOL 35V 2A TSOP-6
- Stock
- 29,606
- In Stock ：
- 29,606
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Length :
- 3.1mm
- hFE Min :
- 100
- Max Breakdown Voltage :
- 35V
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 20mA, 2A
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- -260mV
- Factory Lead Time :
- 13 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 6
- Published :
- 2005
- Terminal Form :
- Gull wing
- Width :
- 1.7mm
- Current Rating :
- -2A
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -35V
- Base Part Number :
- MBT35200
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Power Dissipation :
- 1W
- Pin Count :
- 6
- Package / Case :
- SOT-23-6
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1.5A 1.5V
- Collector Emitter Voltage (VCEO) :
- 35V
- Height :
- 1mm
- Power - Max :
- 625mW
- Transistor Application :
- SWITCHING
- Number of Pins :
- 6
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 55V
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Halogen Free :
- Halogen Free
- Max Collector Current :
- 2A
- Collector Emitter Breakdown Voltage :
- 35V
- Max Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Datasheets
- MBT35200MT1
MBT35200MT1 Documents
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
MBT35200MT1G Overview
This device has a DC current gain of 100 @ 1.5A 1.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -260mV.A VCE saturation (Max) of 310mV @ 20mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 35V volts can be used.A maximum collector current of 2A volts is possible.
MBT35200MT1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
MBT35200MT1G Applications
There are a lot of ON Semiconductor
MBT35200MT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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