MBT3904DW1T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Elements :

2

Terminal Finish :

Tin (Sn)

Transistor Application :

AMPLIFIER

Turn On Time-Max (ton) :

70ns

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Collector Emitter Breakdown Voltage :

40V

Width :

1.35mm

hFE Min :

40

Lead Free :

Lead Free

Pin Count :

6

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

6V

Polarity :

NPN

Transition Frequency :

300MHz

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

60V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current Rating :

200mA

Height :

1mm

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Max Power Dissipation :

150mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

40V

Power Dissipation :

150mW

Base Part Number :

MBT3904D

Length :

2.2mm

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

40V

Number of Terminations :

6

Gain Bandwidth Product :

300MHz

Radiation Hardening :

No

Max Collector Current :

200mA

RoHS Status :

ROHS3 Compliant

Frequency :

300MHz

Factory Lead Time :

8 Weeks

Collector Emitter Saturation Voltage :

300mV

Package / Case :

6-TSSOP, SC-88, SOT-363

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

40V

Number of Pins :

6

Published :

2007

Transistor Type :

2 NPN (Dual)

Element Configuration :

Dual

Terminal Form :

Gull wing

Surface Mount :

yes