MBT3904DW1T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Power Dissipation :

150mW

Terminal Finish :

Tin (Sn)

Transistor Type :

2 NPN (Dual)

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

ECCN Code :

EAR99

Surface Mount :

yes

Radiation Hardening :

No

Max Breakdown Voltage :

40V

Frequency :

300MHz

Polarity :

NPN

JESD-609 Code :

e3

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Height :

1mm

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Transistor Application :

AMPLIFIER

Turn On Time-Max (ton) :

70ns

Factory Lead Time :

8 Weeks

Emitter Base Voltage (VEBO) :

6V

Width :

1.35mm

Voltage - Rated DC :

40V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

200mA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

2007

Base Part Number :

MBT3904D

Gain Bandwidth Product :

300MHz

Collector Emitter Saturation Voltage :

300mV

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

40V

Number of Elements :

2

Length :

2.2mm

Collector Base Voltage (VCBO) :

60V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Pbfree Code :

yes

Number of Terminations :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Transition Frequency :

300MHz

Current Rating :

200mA

hFE Min :

40

Max Power Dissipation :

150mW

Collector Emitter Breakdown Voltage :

40V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V