MBT3946DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Surface Mount :

yes

Mounting Type :

Surface Mount

Contact Plating :

Tin

Terminal Form :

Gull wing

Voltage - Rated DC :

40V

Published :

2004

Transistor Element Material :

SILICON

Power Dissipation :

150mW

Base Part Number :

MBT3946D

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA

Turn On Time-Max (ton) :

70ns

Element Configuration :

Dual

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

hFE Min :

40

Number of Elements :

2

Width :

1.35mm

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

200mA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pin Count :

6

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Current Rating :

200mA

Length :

2.2mm

Number of Pins :

6

Frequency :

300MHz

Transistor Type :

NPN, PNP

Frequency - Transition :

300MHz 250MHz

Collector Emitter Breakdown Voltage :

40V

Packaging :

Cut Tape (CT)

Pbfree Code :

yes

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

8 Weeks

Collector Base Voltage (VCBO) :

60V

Lead Free :

Lead Free

Polarity :

NPN, PNP

Collector Emitter Saturation Voltage :

300mV

Height :

1mm

Max Power Dissipation :

150mW

Gain Bandwidth Product :

300MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 1V

Max Breakdown Voltage :

40V

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

40V

Transition Frequency :

300MHz