BC857BS,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Published :

2009

Terminal Form :

Gull wing

Transition Frequency :

100MHz

Number of Elements :

2

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Polarity :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Max Power Dissipation :

300mW

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

45V

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

45V

Current :

1A

Series :

Automotive, AEC-Q101

RoHS Status :

ROHS3 Compliant

Frequency :

100MHz

Operating Temperature :

150°C TJ

Element Configuration :

Dual

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Voltage :

45V

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 100mA

Base Part Number :

BC857BS

Mount :

Surface Mount

Power - Max :

200mW

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

45V

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Transistor Type :

2 PNP (Dual)

Package / Case :

6-TSSOP, SC-88, SOT-363

Gain Bandwidth Product :

100MHz

Transistor Application :

SWITCHING

Number of Pins :

6

Current - Collector Cutoff (Max) :

15nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation :

300mW

Collector Base Voltage (VCBO) :

50V