BC850AMTF
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- Mfr.Part #
- BC850AMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 33,029
- In Stock ：
- 33,029
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 50V
- Length :
- 2.92mm
- Collector Emitter Saturation Voltage :
- 200mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Published :
- 2008
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Additional Feature :
- LOW NOISE
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Contact Plating :
- Tin
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Base Part Number :
- BC850
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Mount :
- Surface Mount
- Power Dissipation :
- 310mW
- Gain Bandwidth Product :
- 300MHz
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Frequency :
- 300MHz
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- 45V
- Max Power Dissipation :
- 310mW
- Factory Lead Time :
- 6 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Breakdown Voltage :
- 45V
- Current Rating :
- 100mA
- Weight :
- 30mg
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- hFE Min :
- 110
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.3mm
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transition Frequency :
- 300MHz
- Polarity/Channel Type :
- NPN
- Height :
- 930μm
- Max Collector Current :
- 100mA
- Datasheets
- BC850AMTF
BC850AMTF Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850AMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC850AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC850AMTF Applications
There are a lot of ON Semiconductor
BC850AMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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