BC850AMTF
- Mfr.Part #
- BC850AMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 33,029
- In Stock :
- 33,029
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Factory Lead Time :
- 6 Weeks
- Length :
- 2.92mm
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Transition Frequency :
- 300MHz
- Frequency :
- 300MHz
- Max Power Dissipation :
- 310mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Height :
- 930μm
- Base Part Number :
- BC850
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Published :
- 2008
- Additional Feature :
- LOW NOISE
- Power Dissipation :
- 310mW
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Weight :
- 30mg
- Collector Emitter Saturation Voltage :
- 200mV
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Current Rating :
- 100mA
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Base Voltage (VCBO) :
- 50V
- Width :
- 1.3mm
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 45V
- Gain Bandwidth Product :
- 300MHz
- RoHS Status :
- RoHS Compliant
- Max Breakdown Voltage :
- 45V
- hFE Min :
- 110
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Position :
- Dual
- Datasheets
- BC850AMTF
BC850AMTF Documents

NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850AMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC850AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC850AMTF Applications
There are a lot of ON Semiconductor
BC850AMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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