BC850AMTF
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- Mfr.Part #
- BC850AMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 33,029
- In Stock ：
- 33,029
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 45V
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Number of Elements :
- 1
- Width :
- 1.3mm
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Published :
- 2008
- Power Dissipation :
- 310mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 310mW
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- hFE Min :
- 110
- Mount :
- Surface Mount
- Height :
- 930μm
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Current Rating :
- 100mA
- Collector Emitter Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 300MHz
- Length :
- 2.92mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Weight :
- 30mg
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- Gain Bandwidth Product :
- 300MHz
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Saturation Voltage :
- 200mV
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Factory Lead Time :
- 6 Weeks
- Transistor Application :
- SWITCHING
- Base Part Number :
- BC850
- Additional Feature :
- LOW NOISE
- Frequency :
- 300MHz
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC850AMTF
BC850AMTF Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850AMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC850AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC850AMTF Applications
There are a lot of ON Semiconductor
BC850AMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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