BC850AMTF
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- Mfr.Part #
- BC850AMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 7,889
- In Stock ：
- 7,889
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Width :
- 1.3mm
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 110
- Factory Lead Time :
- 6 Weeks
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 310mW
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 45V
- ECCN Code :
- EAR99
- Base Part Number :
- BC850
- Collector Base Voltage (VCBO) :
- 50V
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Form :
- Gull wing
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Additional Feature :
- LOW NOISE
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 930μm
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Published :
- 2008
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Frequency :
- 300MHz
- Length :
- 2.92mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Weight :
- 30mg
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Collector Current :
- 100mA
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 310mW
- Current Rating :
- 100mA
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 300MHz
- Collector Emitter Saturation Voltage :
- 200mV
- Datasheets
- BC850AMTF
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850AMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC850AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC850AMTF Applications
There are a lot of ON Semiconductor
BC850AMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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