BC850AMTF
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- Mfr.Part #
- BC850AMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 31,786
- In Stock ：
- 31,786
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 300MHz
- Number of Elements :
- 1
- Base Part Number :
- BC850
- Gain Bandwidth Product :
- 300MHz
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Contact Plating :
- Tin
- Height :
- 930μm
- Lead Free :
- Lead Free
- Published :
- 2008
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Base Voltage (VCBO) :
- 50V
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Saturation Voltage :
- 200mV
- Max Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Width :
- 1.3mm
- Frequency :
- 300MHz
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Additional Feature :
- LOW NOISE
- Current Rating :
- 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 310mW
- Max Breakdown Voltage :
- 45V
- Factory Lead Time :
- 6 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 310mW
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 110
- Length :
- 2.92mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 45V
- Weight :
- 30mg
- Datasheets
- BC850AMTF
BC850AMTF Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850AMTF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC850AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC850AMTF Applications
There are a lot of ON Semiconductor
BC850AMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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