BC850B,235

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Power Dissipation :

250mW

Current - Collector Cutoff (Max) :

15nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

45V

Gain Bandwidth Product :

100MHz

Terminal Form :

Gull wing

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Number of Pins :

3

Radiation Hardening :

No

Transition Frequency :

100MHz

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

45V

Collector Base Voltage (VCBO) :

50V

Transistor Element Material :

SILICON

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

VCEsat-Max :

0.6 V

Transistor Application :

SWITCHING

Number of Terminations :

3

Series :

Automotive, AEC-Q101

Operating Temperature :

150°C TJ

Transistor Type :

NPN

Max Power Dissipation :

250mW

JESD-609 Code :

e3

Terminal Position :

Dual

Published :

2009

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Frequency :

100MHz

Base Part Number :

BC850

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Collector Current :

100mA