BC850B,235

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Transistor Type :

NPN

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

45V

Radiation Hardening :

No

Mounting Type :

Surface Mount

VCEsat-Max :

0.6 V

Power Dissipation :

250mW

Series :

Automotive, AEC-Q101

Collector Base Voltage (VCBO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

5V

Transition Frequency :

100MHz

Mount :

Surface Mount

Factory Lead Time :

4 Weeks

Base Part Number :

BC850

Collector Emitter Breakdown Voltage :

45V

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Frequency :

100MHz

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

15nA ICBO

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

250mW

Gain Bandwidth Product :

100MHz

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Pin Count :

3

Max Collector Current :

100mA

Published :

2009

Number of Terminations :

3

Polarity/Channel Type :

NPN

Number of Elements :

1