MBT35200MT1
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- Mfr.Part #
- MBT35200MT1
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS SW PNP BIPOL 35V 2A TSOP-6
- Stock
- 29,606
- In Stock ：
- 29,606
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 55V
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Pin Count :
- 6
- Collector Emitter Saturation Voltage :
- -260mV
- Power Dissipation :
- 1W
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Published :
- 2005
- Max Collector Current :
- 2A
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Max Power Dissipation :
- 625mW
- Transistor Type :
- PNP
- hFE Min :
- 100
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- SOT-23-6
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -2A
- Collector Emitter Breakdown Voltage :
- 35V
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 6
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 20mA, 2A
- Length :
- 3.1mm
- Number of Pins :
- 6
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- MBT35200
- Collector Emitter Voltage (VCEO) :
- 35V
- Factory Lead Time :
- 13 Weeks
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1.5A 1.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 35V
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Power - Max :
- 625mW
- Surface Mount :
- yes
- Width :
- 1.7mm
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Halogen Free :
- Halogen Free
- Voltage - Rated DC :
- -35V
- Pbfree Code :
- yes
- Height :
- 1mm
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MBT35200MT1
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
MBT35200MT1G Overview
This device has a DC current gain of 100 @ 1.5A 1.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -260mV.A VCE saturation (Max) of 310mV @ 20mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 35V volts can be used.A maximum collector current of 2A volts is possible.
MBT35200MT1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
MBT35200MT1G Applications
There are a lot of ON Semiconductor
MBT35200MT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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