MBT35200MT1
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- Mfr.Part #
- MBT35200MT1
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS SW PNP BIPOL 35V 2A TSOP-6
- Stock
- 29,606
- In Stock ：
- 29,606
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SOT-23-6
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 13 Weeks
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- yes
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Width :
- 1.7mm
- Max Breakdown Voltage :
- 35V
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- -260mV
- Voltage - Rated DC :
- -35V
- Lead Free :
- Lead Free
- Transition Frequency :
- 100MHz
- Current Rating :
- -2A
- Collector Emitter Breakdown Voltage :
- 35V
- Number of Elements :
- 1
- Published :
- 2005
- Current - Collector Cutoff (Max) :
- 100nA
- Halogen Free :
- Halogen Free
- Max Power Dissipation :
- 625mW
- Height :
- 1mm
- Number of Terminations :
- 6
- Pin Count :
- 6
- hFE Min :
- 100
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Number of Pins :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 55V
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Power - Max :
- 625mW
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 20mA, 2A
- Length :
- 3.1mm
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Base Part Number :
- MBT35200
- Collector Emitter Voltage (VCEO) :
- 35V
- Transistor Type :
- PNP
- Max Collector Current :
- 2A
- Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1.5A 1.5V
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- MBT35200MT1
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
MBT35200MT1G Overview
This device has a DC current gain of 100 @ 1.5A 1.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -260mV.A VCE saturation (Max) of 310mV @ 20mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 35V volts can be used.A maximum collector current of 2A volts is possible.
MBT35200MT1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
MBT35200MT1G Applications
There are a lot of ON Semiconductor
MBT35200MT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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