MBT35200MT1

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Mfr.Part #
MBT35200MT1
Manufacturer
onsemi
Package / Case
SOT-23-6
Datasheet
Download
Description
TRANS SW PNP BIPOL 35V 2A TSOP-6
Stock
29,606
In Stock :
29,606

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Power - Max :
625mW
Collector Emitter Saturation Voltage :
-260mV
Peak Reflow Temperature (Cel) :
260
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Length :
3.1mm
Pin Count :
6
Package / Case :
SOT-23-6
Vce Saturation (Max) @ Ib, Ic :
310mV @ 20mA, 2A
Published :
2005
Emitter Base Voltage (VEBO) :
5V
Height :
1mm
Radiation Hardening :
No
JESD-609 Code :
e3
Number of Elements :
1
Surface Mount :
yes
Number of Pins :
6
Polarity/Channel Type :
PNP
Max Power Dissipation :
625mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Breakdown Voltage :
35V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1.5A 1.5V
Halogen Free :
Halogen Free
Factory Lead Time :
13 Weeks
Element Configuration :
Single
Voltage - Rated DC :
-35V
Power Dissipation :
1W
Terminal Form :
Gull wing
Frequency :
100MHz
Lead Free :
Lead Free
Transistor Type :
PNP
Collector Base Voltage (VCBO) :
55V
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Collector Emitter Breakdown Voltage :
35V
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Current Rating :
-2A
Number of Terminations :
6
Collector Emitter Voltage (VCEO) :
35V
Terminal Position :
Dual
hFE Min :
100
Current - Collector Cutoff (Max) :
100nA
Pbfree Code :
yes
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Base Part Number :
MBT35200
Width :
1.7mm
Transistor Element Material :
SILICON
Max Collector Current :
2A
Gain Bandwidth Product :
100MHz
Terminal Finish :
Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
40
Transition Frequency :
100MHz
RoHS Status :
ROHS3 Compliant
Datasheets
MBT35200MT1
Introducing Transistors - Bipolar (BJT) - Single onsemi MBT35200MT1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:SOT-23-6, Number of Pins:6, Mounting Type:Surface Mount, Number of Terminations:6, Base Part Number:MBT35200, MBT35200MT1 pinout, MBT35200MT1 datasheet PDF, MBT35200MT1 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MBT35200MT1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MBT35200MT1


PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount

MBT35200MT1G Overview


This device has a DC current gain of 100 @ 1.5A 1.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -260mV.A VCE saturation (Max) of 310mV @ 20mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 35V volts can be used.A maximum collector current of 2A volts is possible.

MBT35200MT1G Features


the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz


MBT35200MT1G Applications


There are a lot of ON Semiconductor
MBT35200MT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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