MBT35200MT1
- Mfr.Part #
- MBT35200MT1
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS SW PNP BIPOL 35V 2A TSOP-6
- Stock
- 29,606
- In Stock :
- 29,606
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 625mW
- Collector Emitter Saturation Voltage :
- -260mV
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Length :
- 3.1mm
- Pin Count :
- 6
- Package / Case :
- SOT-23-6
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 20mA, 2A
- Published :
- 2005
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 1mm
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Surface Mount :
- yes
- Number of Pins :
- 6
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 35V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1.5A 1.5V
- Halogen Free :
- Halogen Free
- Factory Lead Time :
- 13 Weeks
- Element Configuration :
- Single
- Voltage - Rated DC :
- -35V
- Power Dissipation :
- 1W
- Terminal Form :
- Gull wing
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- 55V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Breakdown Voltage :
- 35V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Current Rating :
- -2A
- Number of Terminations :
- 6
- Collector Emitter Voltage (VCEO) :
- 35V
- Terminal Position :
- Dual
- hFE Min :
- 100
- Current - Collector Cutoff (Max) :
- 100nA
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Base Part Number :
- MBT35200
- Width :
- 1.7mm
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 2A
- Gain Bandwidth Product :
- 100MHz
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- MBT35200MT1

PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
MBT35200MT1G Overview
This device has a DC current gain of 100 @ 1.5A 1.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -260mV.A VCE saturation (Max) of 310mV @ 20mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 35V volts can be used.A maximum collector current of 2A volts is possible.
MBT35200MT1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
MBT35200MT1G Applications
There are a lot of ON Semiconductor
MBT35200MT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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