MBT35200MT1
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- Mfr.Part #
- MBT35200MT1
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS SW PNP BIPOL 35V 2A TSOP-6
- Stock
- 29,606
- In Stock ：
- 29,606
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 100
- Base Part Number :
- MBT35200
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- -2A
- Gain Bandwidth Product :
- 100MHz
- Polarity/Channel Type :
- PNP
- Frequency :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 35V
- Published :
- 2005
- Factory Lead Time :
- 13 Weeks
- Max Power Dissipation :
- 625mW
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Saturation Voltage :
- -260mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1.5A 1.5V
- Length :
- 3.1mm
- Halogen Free :
- Halogen Free
- Power - Max :
- 625mW
- Number of Terminations :
- 6
- Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Number of Pins :
- 6
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Package / Case :
- SOT-23-6
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 55V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 35V
- Height :
- 1mm
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA
- Transition Frequency :
- 100MHz
- Radiation Hardening :
- No
- Pin Count :
- 6
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 20mA, 2A
- Voltage - Rated DC :
- -35V
- Max Collector Current :
- 2A
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 35V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.7mm
- Datasheets
- MBT35200MT1
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
MBT35200MT1G Overview
This device has a DC current gain of 100 @ 1.5A 1.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -260mV.A VCE saturation (Max) of 310mV @ 20mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 35V volts can be used.A maximum collector current of 2A volts is possible.
MBT35200MT1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
MBT35200MT1G Applications
There are a lot of ON Semiconductor
MBT35200MT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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