MBT35200MT1G
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- Mfr.Part #
- MBT35200MT1G
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- TRANS PNP 35V 2A 6TSOP
- Stock
- 110,925
- In Stock ：
- 110,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- -260mV
- Height :
- 1mm
- Transition Frequency :
- 100MHz
- Width :
- 1.7mm
- REACH SVHC :
- No SVHC
- hFE Min :
- 100
- Vce Saturation (Max) @ Ib, Ic :
- 310mV @ 20mA, 2A
- Collector Base Voltage (VCBO) :
- 55V
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Factory Lead Time :
- 13 Weeks
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Power - Max :
- 625mW
- Number of Pins :
- 6
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 35V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1.5A 1.5V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 2A
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- MBT35200
- Max Breakdown Voltage :
- 35V
- Collector Emitter Voltage (VCEO) :
- 35V
- Halogen Free :
- Halogen Free
- Length :
- 3.1mm
- Voltage - Rated DC :
- -35V
- Published :
- 2005
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Max Power Dissipation :
- 625mW
- Pin Count :
- 6
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SOT-23-6
- Terminal Form :
- Gull wing
- Number of Terminations :
- 6
- Radiation Hardening :
- No
- Current Rating :
- -2A
- Datasheets
- MBT35200MT1G
MBT35200MT1G Documents
PNP -55°C~150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SOT-23-6 Tape & Reel (TR) Surface Mount
MBT35200MT1G Overview
This device has a DC current gain of 100 @ 1.5A 1.5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -260mV.A VCE saturation (Max) of 310mV @ 20mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 35V volts can be used.A maximum collector current of 2A volts is possible.
MBT35200MT1G Features
the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
MBT35200MT1G Applications
There are a lot of ON Semiconductor
MBT35200MT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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