NCV1413BDR2G
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- Mfr.Part #
- NCV1413BDR2G
- Manufacturer
- onsemi
- Package / Case
- 16-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- TRANS 7NPN DARL 50V 0.5A 16SOIC
- Stock
- 14,110
- In Stock ：
- 14,110
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Output Voltage :
- 50V
- Transistor Type :
- 7 NPN Darlington
- Contact Plating :
- Tin
- Current Rating :
- 500mA
- Operating Temperature :
- 150°C TJ
- Output Current :
- 50μA
- Number of Terminations :
- 16
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Configuration :
- COMPLEX
- Max Collector Current :
- 500mA
- Halogen Free :
- Halogen Free
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Package / Case :
- 16-SOIC (0.154, 3.90mm Width)
- Base Part Number :
- NCV1413
- Transistor Application :
- SWITCHING
- Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 350mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 7
- Number of Pins :
- 16
- JESD-609 Code :
- e3
- Width :
- 4mm
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Published :
- 2006
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Saturation Voltage :
- 1.6V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Voltage - Rated DC :
- 50V
- Factory Lead Time :
- 16 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 500μA, 350mA
- hFE Min :
- 1000
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Height :
- 1.5mm
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Weight :
- 665.986997mg
- Length :
- 10mm
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 16
- Datasheets
- NCV1413BDR2G
NCV1413BDR2G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ON Semiconductor stock available at
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