NSS40300MDR2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pin Count :

8

Collector Emitter Saturation Voltage :

-170mV

Collector Base Voltage (VCBO) :

40V

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

40V

Halogen Free :

Halogen Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Current - Collector (Ic) (Max) :

3A

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

40V

Element Configuration :

Dual

Number of Pins :

8

Number of Terminations :

8

Transition Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 1A 2V

Power - Max :

653mW

JESD-609 Code :

e3

Width :

4mm

Terminal Form :

Gull wing

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current - Collector Cutoff (Max) :

100nA ICBO

Max Power Dissipation :

783mW

Surface Mount :

yes

Max Collector Current :

3A

Polarity :

PNP

Length :

5mm

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

170mV @ 200mA, 2A

Height :

1.5mm

Emitter Base Voltage (VEBO) :

7V

Terminal Finish :

Tin (Sn)

Transistor Type :

2 PNP (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Factory Lead Time :

2 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Max (toff) :

530ns

Qualification Status :

Not Qualified

Published :

2008

Lead Free :

Lead Free

Gain Bandwidth Product :

100MHz

Transistor Application :

SWITCHING