NSS40302PDR2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 1A 2V

Width :

4mm

Max Collector Current :

3A

Power Dissipation :

783mW

Vce Saturation (Max) @ Ib, Ic :

115mV @ 200mA, 2A

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

40V

Surface Mount :

yes

Max Power Dissipation :

783mW

Pin Count :

8

Height :

1.5mm

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

JESD-609 Code :

e3

Published :

2008

Number of Terminations :

8

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Gain Bandwidth Product :

100MHz

Length :

5mm

Number of Elements :

2

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

40V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Emitter Base Voltage (VEBO) :

7V

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Lead Free :

Lead Free

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

100MHz

Max Breakdown Voltage :

40V

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN, PNP

Polarity :

NPN, PNP

Power - Max :

653mW

Transition Frequency :

100MHz

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

2 Weeks

Collector Emitter Saturation Voltage :

115mV

Halogen Free :

Halogen Free