NSS40300MZ4T1G
- Mfr.Part #
- NSS40300MZ4T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A SOT223
- Stock
- 993
- In Stock :
- 993
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 4
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 40V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 175 @ 1A 1V
- Surface Mount :
- yes
- Max Breakdown Voltage :
- 40V
- Max Collector Current :
- 3A
- hFE Min :
- 200
- Factory Lead Time :
- 5 Weeks
- Package / Case :
- TO-261-4, TO-261AA
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 160MHz
- Power Dissipation :
- 2W
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Halogen Free :
- Halogen Free
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 40V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- Number of Pins :
- 4
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Gain Bandwidth Product :
- 160MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Max Power Dissipation :
- 2W
- Base Part Number :
- NSS40300
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 300mA, 3A
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Transition Frequency :
- 160MHz
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Number of Terminations :
- 4
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Datasheets
- NSS40300MZ4T1G

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NSS40300MZ4T1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 175 @ 1A 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 160MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 3A volts.
NSS40300MZ4T1G Features
the DC current gain for this device is 175 @ 1A 1V
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz
NSS40300MZ4T1G Applications
There are a lot of ON Semiconductor
NSS40300MZ4T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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