NSS40300MZ4T1G

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Mfr.Part #
NSS40300MZ4T1G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 40V 3A SOT223
Stock
993
In Stock :
993

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
4
Radiation Hardening :
No
Emitter Base Voltage (VEBO) :
6V
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
40V
DC Current Gain (hFE) (Min) @ Ic, Vce :
175 @ 1A 1V
Surface Mount :
yes
Max Breakdown Voltage :
40V
Max Collector Current :
3A
hFE Min :
200
Factory Lead Time :
5 Weeks
Package / Case :
TO-261-4, TO-261AA
Published :
2007
Collector Base Voltage (VCBO) :
40V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Frequency :
160MHz
Power Dissipation :
2W
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Lead Free
Halogen Free :
Halogen Free
Case Connection :
COLLECTOR
Collector Emitter Voltage (VCEO) :
40V
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Pbfree Code :
yes
Number of Pins :
4
Polarity/Channel Type :
PNP
Transistor Application :
SWITCHING
Gain Bandwidth Product :
160MHz
Current - Collector Cutoff (Max) :
100nA ICBO
Terminal Form :
Gull wing
Number of Elements :
1
Contact Plating :
Tin
Max Power Dissipation :
2W
Base Part Number :
NSS40300
Packaging :
Tape and Reel (TR)
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
400mV @ 300mA, 3A
Mounting Type :
Surface Mount
Terminal Position :
Dual
Transition Frequency :
160MHz
Element Configuration :
Single
JESD-609 Code :
e3
Number of Terminations :
4
Transistor Type :
PNP
ECCN Code :
EAR99
Datasheets
NSS40300MZ4T1G
Introducing Transistors - Bipolar (BJT) - Single onsemi NSS40300MZ4T1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Base Part Number:NSS40300, Mounting Type:Surface Mount, Number of Terminations:4, NSS40300MZ4T1G pinout, NSS40300MZ4T1G datasheet PDF, NSS40300MZ4T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi NSS40300MZ4T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NSS40300MZ4T1G


PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

NSS40300MZ4T1G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 175 @ 1A 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 160MHz in the part.Single BJT transistor can be broken down at a voltage of 40V volts.When collector current reaches its maximum, it can reach 3A volts.

NSS40300MZ4T1G Features


the DC current gain for this device is 175 @ 1A 1V
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz


NSS40300MZ4T1G Applications


There are a lot of ON Semiconductor
NSS40300MZ4T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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