NSS40302PDR2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

40V

Published :

2008

JESD-609 Code :

e3

Surface Mount :

yes

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Element Material :

SILICON

Number of Elements :

2

Max Collector Current :

3A

Collector Emitter Breakdown Voltage :

40V

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

40V

Length :

5mm

Power Dissipation :

783mW

Factory Lead Time :

2 Weeks

Operating Temperature :

-55°C~150°C TJ

Power - Max :

653mW

Mounting Type :

Surface Mount

Collector Base Voltage (VCBO) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

100MHz

Transistor Application :

SWITCHING

Max Power Dissipation :

783mW

Width :

4mm

Element Configuration :

Dual

Frequency :

100MHz

Pin Count :

8

Gain Bandwidth Product :

100MHz

Collector Emitter Saturation Voltage :

115mV

Current - Collector Cutoff (Max) :

100nA ICBO

Polarity :

NPN, PNP

Emitter Base Voltage (VEBO) :

7V

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Terminal Form :

Gull wing

Radiation Hardening :

No

Transistor Type :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

115mV @ 200mA, 2A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Number of Pins :

8

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 1A 2V

Height :

1.5mm