NSS40301MZ4T1G
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- Mfr.Part #
- NSS40301MZ4T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 3A SOT223
- Stock
- 9,964
- In Stock ：
- 9,964
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 215MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 1V
- Frequency :
- 215MHz
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Height :
- 1.65mm
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 220
- Emitter Base Voltage (VEBO) :
- 6V
- Surface Mount :
- yes
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Contact Plating :
- Tin
- Base Part Number :
- NSS40301
- Transistor Type :
- NPN
- Number of Terminations :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 40V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 3A
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 2W
- Pbfree Code :
- yes
- Halogen Free :
- Halogen Free
- Terminal Form :
- Gull wing
- Transition Frequency :
- 215MHz
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2W
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Length :
- 6.7mm
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 300mA, 3A
- Max Breakdown Voltage :
- 40V
- Width :
- 3.7mm
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 200mV
- Datasheets
- NSS40301MZ4T1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NSS40301MZ4T1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 1V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 300mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 215MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 3A volts at its maximum.
NSS40301MZ4T1G Features
the DC current gain for this device is 200 @ 1A 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 215MHz
NSS40301MZ4T1G Applications
There are a lot of ON Semiconductor
NSS40301MZ4T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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