NSS40301MDR2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Frequency :

100MHz

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Surface Mount :

yes

Pin Count :

8

Transistor Type :

2 NPN (Dual)

Transistor Element Material :

SILICON

Number of Pins :

8

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

1.5mm

Collector Emitter Breakdown Voltage :

40V

Vce Saturation (Max) @ Ib, Ic :

115mV @ 200mA, 2A

Polarity :

NPN

Base Part Number :

NSS40301

Collector Emitter Voltage (VCEO) :

40V

Collector Base Voltage (VCBO) :

40V

Power - Max :

653mW

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 1A 2V

Lead Free :

Lead Free

Max Collector Current :

3A

Element Configuration :

Dual

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

115mV

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

4mm

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Length :

5mm

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Factory Lead Time :

2 Weeks

Gain Bandwidth Product :

100MHz

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Transition Frequency :

100MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Emitter Base Voltage (VEBO) :

6V

Pbfree Code :

yes

Terminal Form :

Gull wing

Max Power Dissipation :

783mW

RoHS Status :

ROHS3 Compliant

Published :

2008

Power Dissipation :

783mW